A STUDY ON 6T SRAM AND 7T SRAM CELLS

JenniferEunice.R, S. AlimaAashika, T. Bharathisankari

Abstract: Nowadays data storage is gaining more importance in human life. All electronic and digital devices need memory for reducing the power consumption. The concept of “more data in less space” is useful for increasing the system performance and overall system efficiency. Generally we used semiconductor memory as “SRAM”. SRAM can be abbreviated “Static Random Access Memory”. Many VLSI chip can have SRAM memory because of their large storage capacity and fast accessing time. Where, the word static indicates that it does not need to be habitually refreshed but the DRAM need habitually refreshed. DRAM can be abbreviated as “Dynamic Random Access Memory” which is another type of memory. Both the memories can be classified from “Random Access Memory: (RAM). In this paper the power analysis of 6 transistor SRAM is compared with 7 transistor SRAM. As a result the power dissipation of 7 transistors is high when compared with 6 transistors. The power dissipation of 6T SRAM is about 2.991mW and the power dissipation of 7T SRAM is about 3.183Mw.SRAM are mostly used for mobile applications, because of their ease of use and low leakage of power. In this paper the schematic of 6T SRAM and 7T SRAM are drawn using DSCH software and the layouts are drawn using MICROWIND software.

Keywords: 6T SRAM, 7T SRAM, Power Dissipation

DOI: https://doi.org/10.15623/ijret.2018.0702010