CHARGE TRANSPORT MECHANISM OF AL/CD1-XZNXS/ITO SCHOTTKY DIODE AND ITS PHOTOSENSING BEHAVIOR

Joydeep Datta, Mrinmay Das, Arka Dey, Sayantan Sil, Rajkumar Jana, Partha Pratim Ray

Abstract: In this study, nanocrystalline Cd1-xZnxS (x=0, 0.4, 0.8) were synthesized by co precipitation method. Material characterization was done by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and UV-Vis absorption spectroscopy. From XRD data, it is noticed that the particle size of CdS is changed due to the doping of Zn. The band gap of CdS is also tuned with the introduction of Zn within the nanocomposite. The synthesized nanomaterials were applied in metal-semiconductor Schottky device and studied at room temperature. Its charge transport mechanism is explained with the help of SCLC (space charge limited current) theory. The outcome of this explanation has inspired us to find out the capability of the nanocomposite in the application of devices like photodetector, photosensor etc.. So, we have derived the photosensitive parameter from the current-voltage (I-V) data under illumination. The conclusions from the electrical characterizations of the Schottky diodes reveal the higher mobility of Cd0.6Zn0.4S is (4.61?10-6 m 2V -1 s -1 ) and better detectivity ability (11.336 ? 109 Jones) than the other synthesized nanomaterial. So, Cd0.6Zn0.4S shows the potential as a better candidate in the application of photovoltaic device.

Keywords: MECHANISM

DOI: https://doi.org/10.15623/ijret.2017.0613014