AL/CUFES2/ITO BEHAVES LIKE SWITCH DEVICE WITH NEGATIVE DIFFERENTIAL RESISTANCE

AnimeshLayek, SomnathMiddy

Abstract: Semiconducting CuFeS2 nanoparticle has been synthesized by hydrothermal technique. Its special physical and electronic properties through the nanostructures make it a promising material for versatile device application. Here a thin film device of configuration Al/CuFeS2/ITO has been fabricated, which behaves like a resonant tunneling device. The device shows a negative differential resistance at room temperature. The characteristic of this portable device discloses its probable applicability in solidstate switch.

Keywords: CuFeS2; Nanomaterial; Synthesis; Characterization; Resonance tunneling; Negative resistance.

DOI: https://doi.org/10.15623/ijret.2017.0613011