ILLUMINATION WAVELENGTH EFFECT ON THE DIFFUSION CAPACITANCE OF A PARALLEL VERTICAL JUNCTION SILICON SOLAR CELL UNDER STEADY STATE AND UNDER IRRADIATION

Alioune Badara Dieng, Fakoro SouleymaneDia, Senghane Mbodj, Ibrahima Ly, Gregoire Sissoko

Abstract: In this article we have made a theoretical study of a vertical junction solar cell in parallel monochromatic illumination under static mode and under irradiation. The resolution of the continuity equation which governs the electron scattering process in the base help us to establish the expression of the density of electrons in the base and, from that, deduce by expressing the diffusion capacitance according to the wavelength ?, the recombination velocity at the junction Sf and the parameters of irradiation. We have studied the influence of wavelength variation on the diffusion capacitance , the short-circuit capacitance of diffusion, the open-circuit capacitance of diffusion and the diffusion capacitance efficiency.

Keywords: Diffusion Capacitance -Wavelength- Silicon Solar Cell-Efficiency

DOI: https://doi.org/10.15623/ijret.2017.0612009