STATIC MODE STUDY OF THE IRRADIATION EFFECT ON ELECTRICAL PARAMETERS OF A PARALLEL VERTICAL JUNCTION SILICON SOLAR CELL UNDER MONOCHROMATIC ILLUMINATION

Alioune Badara Dieng, Fakoro Souleymane Dia, Senghane Mbodj, Ibrahima Ly, Gregoire Sissoko

Abstract: In this article we have made a theoretical study of a parallel vertical junction solar cell under monochromatic illumination in static mode and under irradiation. The resolution of the continuity equation which governs the electron scattering process in the base helps us to establish the expression of the electron density and deduce expressions of photocurrent density and photovoltage depending on the wavelength ?, recombination velocity at the junction and irradiation parameters. Expressions series and shunt resistance according to the wavelength, the recombination velocity at the junction and irradiation parameters are obtained from the photovoltage and photocurrent density. We have studied the influence of irradiation variationon the electron density in the base, the photocurrent, photovoltage and the shunt and series resistances.

Keywords: Silicon vertical junction- wavelength –shunt and series resistances-irradiation.

DOI: https://doi.org/10.15623/ijret.2017.0612008