ILLUMINATION WAVELENGTH EFFECT ON ELECTRICAL PARAMETERS OF A PARALLEL VERTICAL JUNCTION SILICON SOLAR CELL UNDER STEADY STATE AND UNDER IRRADIATION

Alioune Badara Dieng, Boureima Seibou, Seydi Ababacar Ndiaye, Mamadou Wade, Marcel Sitor Diouf, Ibrahima LY, Grégoire Sissoko

Abstract: In this article we made a theoretical study of a solar cell in parallel vertical junction under monochromatic illumination in static mode and under irradiation. The resolution of the continuity equation which governs the electron scattering process in the base help us to establish the electrons density expression and deduce expressions of photocurrent density and photovoltage depending on the wavelength ?, recombination velocity at the junction Sf and irradiation parameters. Expressions series resistors and the shunt according to the wavelength, the recombination velocity at the junction and irradiation parameters are obtained from the photovoltage and photocurrent density. We have studied the influence of the variation of the wavelength on the electrons density in the base, the photocurrent, photovoltage and the shunt and series resistors.

Keywords: Silicon Vertical Junction-Wavelength -Irradiation-Shunt and Series Résistances

DOI: https://doi.org/10.15623/ijret.2016.0507021