ELLIPTICAL GATE MOSFETS A MODELING APPROACH

Anu Puri, Parul Wadhwa

Abstract: The demand for higher current drives, better short channel characteristics has led to the evolution of multiple gate mosfets from classical single gate devices. Silicon gate all around mosfets(GAA) offers maximum gate control over the channel which makes them an excellent choice among non classical MOS devises. However GAA mosfets with circular cross sections are not common in real fabrication. Elliptical Cross sections have been reported. In this paper new modeling approach for elliptical GAA have been investigated, dependence of physical properties of a device on the behavior of multiple gate devices have been discussed.

Keywords: Circular, Effective Radius, SCE (Short Channel Effects), Elliptical, Gate-All-Around (GAA), Nanowire, Aspect Ratio

DOI: https://doi.org/10.15623/ijret.2016.0506041