COMPARATIVE ANALYSIS OF TECHNOLOGY ADVANCEMENT FROM SINGLE GATE TO MULTI-GATE MOSFET

Abhishek Kumar, Anil Kumar Swain

Abstract: Among the entire contender in modern microelectronics,DG-MOSFET is a front line runner in planar technology. Itsunique structure allows scaling the device at sub-nanometer region and mimicking the electrical characteristics of a MOSFET.Here simulation of NMOS, SOI-NMOS, and DG-NMOS is presentedand relative comparison among short channel characteristics ispresented.It has been seen that among all the above stated device, DG-MOSFET possess better immune to leakage current with betterDIBL, whereas SOI MOSFET have better driving capacity.

Keywords: SOI-MOSFET, DG-MOSFET, UTB, DIBL,SCEs

DOI: https://doi.org/10.15623/ijret.2016.0501030