ELECTRICAL MEASUREMENT OF LA MODIFIED BI4TI3O12 FRAM CERAMIC

Md. Abdul Basheer, N V Prasad, G Prasad, G S Kumar

Abstract: Bismuth Layer Structured Ferroelectric (BLSF) ceramic of La0.75Bi3.25Ti3O12, (BLT) abbreviated as future promising ferroelectric random access memory materials was prepared by the conventional solid-state reaction method. Resistivity and dielectric measurements were made as a function of temperature and frequency. The remnant polarization (Pr) is found to be 16 ?C/cm2 . The ferroelectric results were corroborated with the electrical impedance, resistivity and hysteresis properties

Keywords: Resistivity, Cole-Cole fitting, FRAM, conductivity, impedance

DOI: https://doi.org/10.15623/ijret.2015.0419006