EFFECT OF ALPHA IRRADIATION ON SILICON SCHOTTKY DIODE DETECTOR

Niharika. R. Sukhrani, Achintya Das, Prakash Vaidya, Siddhartha. P. Duttagupta

Abstract: This paper gives a brief overview of Semiconductor Schottky diode detector in response to a-particle irradiation. As a-particle are difficult to detect so we need a high resolution device for its detection. In this paper we have simulated a model of Si Schottky diode detector in Sentaurus TCAD Software. TCAD (Technology Computer Aided Design) simulation is a boon for the semiconductor devices. Using this tool we can simulate and design semiconductor devices and can generate simulation model to get the best optimum simulation results for semiconductor diode. Sentaurus TCAD supports wide range of semiconductor technologies from conventional to compound semiconductor detector. a-particles induced transient current pulse measurement were carried out on Si Schottky diode at (1) different temperature, (2) different energies of the incident a-particle and (3) different reverse bias of Schottky diode. Effect of temperature, incident a-particle and reverse bias on the generated a- induced transient current pulse were analyzed.

Keywords: Semiconductor Schottky diode, Single event transient (SET), a particle, reverse bias, Sentaurus TCAD.

DOI: https://doi.org/10.15623/ijret.2015.0404018