MODELING, DESIGNING AND STRUCTURAL ANALYSIS OF GAN BLUE LASER DIODE

Baby Dhanya S N, Sherin Thomas

Abstract: Quantum wells are effective potential wells in which an extremely thin semiconductor layer with a narrower band-gap is surrounded by two layers with a wider band gap. Quantum wells are widely used in diode lasers, HEMTs, Quantum well infrared photo detectors and mode locking lasers. Analysis of InGaN based blue laser diodes is required for the research and development of future deep UV laser diodes for bio-sensing applications. This technology emerged as the advancement of 3-dimensional Bulk model and it led to the new technologies such as 1-dimensional Quantum wires and 0-dimensional Quantum dots. Group III nitride wide band gap semiconductors have recently attracted considerable attention due to their applications for optical devices operating in the blue and UV wavelength regions. This paper focuses on the design and modelling of a novel structure for the active region of InGaN blue laser diodes

Keywords: Semiconductor Laser Diode, Electromagnetic Interference, Separate Confinement Heterostructure

DOI: https://doi.org/10.15623/ijret.2014.0313006