MULTIPLE GATE FIELD-EFFECT TRANSISTORS FOR FUTURE CMOS TECHNOLOGIES

Suhas N.Yadav, M.S.Jadhav

Abstract: This is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main flavors (variants) of Multigate FETs; and their advantages/disadvantages. The physics and technology of these devices is briefly discussed. Results are then presented which show the performance figures of merit of FinFETs, and their strengths and weaknesses. Finally, a perspective on the future of the FinFET technology is presented.

Keywords: CMOS scaling, Double gate MOSFET, FinFET, Multiple gate FET, Multigate FET

DOI: https://doi.org/10.15623/ijret.2014.0302095