OPTICAL AND SURFACE PROPERTIES OF AL DOPED GA2O3 BY ELEMENTAL STACK METHOD

Subramani Shanmugan, Devarajan Mutharasu, Lee Zhi Yin

Abstract: Al doped Ga2O3 thin film was prepared by stacking of Al thin film on Ga2O3 thin film using thermal evaporator. The doping process was carried out by post annealing process at three different temperatures. The absorbance spectra revealed the Al doping process and showed low absorbance at high annealing temperature. Scanning Electron Microscope images were the evidence of surface effect due to Al diffuses at high annealing temperature (> 400°C). Energy Dispersive Spectra showed the changes in the elemental composition of Al doped Ga2O3 thin film for various annealing temperature and revealed Al diffusion by observed low Al content at the surface of the doped Ga2O3 thin film.

Keywords: Ga2O3, Al doping, Optical properties, Surface analysis

DOI: https://doi.org/10.15623/ijret.2013.0211001