INTENSE UV ENRICHED PHOTO DETECTION BY HIGHER ENERGY EDGE ATTUNED COATING ON CSI DETECTOR

Bablu K. Ghosh, Ismail Saad, KhairulAnuar Mohamad, Saiful S. Mohd Zainal

Abstract: Solar UV detector industrial applications and monitoring is potential approach for technology based industrial development and ecosystem management aspects. Respect to visible spectrum both shorter and longer line width are not so promising for solar energy detecting/ harvesting by using Si technology. For lower energy edge of UV band absorption process, utilization of UV compatible higher energy edge reaping supportive thickness of additional Si3N4 layer on SiO2 coating layer for crystalline c-Si detector is found promising. As compared to single SiO2 coating layer or bared c-Si cell, applications of SiO2+Si3N4 double coating layer enhancement of the detector current or responsivity is specifically observed. Compare to lower energy edge of solar spectrum, UV (A-B) band enhanced energy conversion slant is found attractive. In this article, using =60 nm SiO2 +Si3N4harmonized coating layers on P+N, N +P and P+ IN Si based detector, very intense UV band response is realized. It appears that tiny i-layer with minimum n-doping in P + iN structure as compared to the P+N detector, increases the conversion efficiency. Compared to P+N detector N+P detector responsivity or conversion efficiency is found to be enhanced explicitly.

Keywords: UV detector, Si3N4 coating, eco-system, UV enhancement, Solar energy harvesting

DOI: https://doi.org/10.15623/ijret.2013.0210096